K4S281632K-UC75T00 Samsung Semiconductor, K4S281632K-UC75T00 Datasheet - Page 8

• Manufacturer Part Number: K4S281632K-UC75T00
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S281632K-UC75T00

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 140mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

K4S280832K
K4S281632K
Note :
Notes :
8.0 Absolute Maximum Ratings
9.0 DC Operating Conditions
Recommended operating conditions (Voltage referenced to V
10.0 Capacitance
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x8 : DQ0 ~ DQ7), (x16 : DQ0 ~ DQ15)
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
Parameter
supply relative to V
IN
≤ V
DDQ
SS
Pin
.
SS
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Min
-0.3
Symbol
DD
-10
3.0
2.0
2.4
IN
T
-
, V
I
, V
P
STG
OS
D
OUT
DDQ
SS
8 of 15
= 0V, T
Symbol
A
C
C
C
Typ
3.3
3.0
C
= 0 to 70°C)
0
ADD
OUT
-
-
-
CLK
IN
(V
DD
= 3.3V, T
V
DD
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
Min
-
+0.3
2.5
2.5
2.5
4.0
Value
A
50
1
= 23°C, f = 1MHz, V
Synchronous DRAM
Rev. 1.23 March 2009
Unit
uA
V
V
V
V
V
Max
3.5
3.8
3.8
6.0
REF
=1.4V ± 200 mV)
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
Unit
1
2
3
pF
pF
pF
pF