MT46H32M16LFBF-6 IT:B Micron Technology Inc, MT46H32M16LFBF-6 IT:B Datasheet - Page 88
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H32M16LFBF-6 IT:B
Manufacturer Part Number
MT46H32M16LFBF-6 IT:B
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H32M16LFBF-6_ITB.pdf
(98 pages)
Specifications of MT46H32M16LFBF-6 IT:B
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
105mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 48: Bank Write – Without Auto Precharge
Command
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
6
t
t
IS
IS
NOP
T0
t
t
IH
1
IH
Notes:
t
t
IS
ACTIVE
Bank x
IS
Row
Row
T1
t
t
IH
IH
t
CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.
6. D
these times.
t
OUT
t
RCD
RAS
NOP
n = data-out from column n.
T2
1
t
CH
t
CL
t
WRITE
Bank x
Note 4
IS
Col n
t
WPRES
T3
t
t
IH
DQSS (NOM)
2
88
t
DS
NOP
D
T4
t
512Mb: x16, x32 Mobile LPDDR SDRAM
DH
IN
t
WPRE
1
T4n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSL
NOP
T5
t
1
DQSH
T5n
t
WPST
NOP
T6
1
Don’t Care
© 2004 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
NOP
WR
T7
1
Transitioning Data
One bank
All banks
Bank x
T8
PRE
3
5
t
RP
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