MT46H32M16LFBF-6 IT:B Micron Technology Inc, MT46H32M16LFBF-6 IT:B Datasheet - Page 67
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MT46H32M16LFBF-6 IT:B
Manufacturer Part Number
MT46H32M16LFBF-6 IT:B
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H32M16LFBF-6_ITB.pdf
(98 pages)
Specifications of MT46H32M16LFBF-6 IT:B
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
105mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 29: READ-to-PRECHARGE
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Command
Address
Address
DQ4
DQS
DQS
DQ
CK#
CK#
CK
CK
4
Notes:
Banka,
Col n
Banka,
Col n
READ
READ
T0
T0
1. BL = 4, or an interrupted burst of 8 or 16.
2. PRE = PRECHARGE command.
3. ACT = ACTIVE command.
4. D
5. Shown with nominal
6. READ-to-PRECHARGE equals 2 clocks, which enables 2 data pairs of data-out.
7. A READ command with auto precharge enabled, provided
1
1
cause a precharge to be performed at x number of clock cycles after the READ com-
mand, where x = BL/2.
OUT
n = data-out from column n.
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
T1n
D
(a or all)
(a or all)
t
Bank a,
Bank a,
AC,
OUT
T2
T2
PRE
PRE
t
2
67
2
DQSCK, and
D
T2n
T2n
OUT
512Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
T3
NOP
T3
NOP
OUT
t
DQSQ.
D
Don’t Care
OUT
T3n
t
t
T3n
D
RP
RP
OUT
D
OUT
T4
T4
NOP
NOP
D
OUT
t
RAS (MIN) is met, would
Transitioning Data
© 2004 Micron Technology, Inc. All rights reserved.
READ Operation
Bank a,
Bank a,
T5
T5
ACT
Row
ACT
Row
3
3
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