MT48LC8M16A2P-7E:G Micron Technology Inc, MT48LC8M16A2P-7E:G Datasheet - Page 70

IC, SDRAM 128MB, SMD, 48LC8, TSOP54

MT48LC8M16A2P-7E:G

Manufacturer Part Number
MT48LC8M16A2P-7E:G
Description
IC, SDRAM 128MB, SMD, 48LC8, TSOP54
Manufacturer
Micron Technology Inc
Type
SDRAMr
Series
-r
Datasheet

Specifications of MT48LC8M16A2P-7E:G

Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
165mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Access Time
RoHS Compliant
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Package / Case
TSOP
Memory Type
SDRAM
Memory Configuration
4 BLK (2M X 16)
Interface Type
LVTTL
Rohs Compliant
Yes
Format - Memory
RAM
Memory Size
128M (8Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC8M16A2P-7E:G
Manufacturer:
ANPEC
Quantity:
34 000
Part Number:
MT48LC8M16A2P-7E:G
Manufacturer:
MT
Quantity:
1 000
Part Number:
MT48LC8M16A2P-7E:G
Manufacturer:
MICRON-Pb free
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MT48LC8M16A2P-7E:G
Manufacturer:
MICRON
Quantity:
20 000
Figure 54:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
DQML, DQMH
COMMAND
A0–A9, A11
BA0, BA1
DQM /
CKE
A10
CLK
DQ
WRITE – Full-Page Burst
t CKS
t CMS
t AS
t AS
t AS
Notes:
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD
1. x16: A9 and A11 = “Don’t Care.”
2.
3. Page left open; no
t CL
x8: A11 = “Don’t Care.”
t
WR must be satisfied prior to PRECHARGE command.
T1
NOP
t CH
t CMS
t CK
t DS
COLUMN m 1
D
T2
WRITE
BANK
IN
t CMH
m
t DH
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
70
1,024 (x8) locations within same row
2,048 (x4) locations within same row
512 (x16) locations within same row
t DS
D
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
NOP
m + 3
t DH
(
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128Mb: x4, x8, x16 SDRAM
(
)
(
(
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(
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)
t DS
D
Tn + 1
IN
NOP
m - 1
t DH
©1999 Micron Technology, Inc. All rights reserved.
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command to stop.
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
2, 3
Tn + 3
NOP

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