RD38F1020C0ZBL0S B93 Intel, RD38F1020C0ZBL0S B93 Datasheet - Page 34

• Manufacturer Part Number: RD38F1020C0ZBL0S B93
• Manufacturer: Intel

Specifications of RD38F1020C0ZBL0S B93

• Operating Supply Voltage (max): 3.3V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

C3 SCSP Flash Memory
Table 15.
5.7
Table 16.
26 Aug 2005
34
t
t
t
t
t
t
t
Notes:
1.
2.
3.
W11 t
Notes:
1.
2.
3.
BWPB
BWMB
WHQV1
WHQV2
WHQV3
WHRH1
WHRH2
W1
#
0
Symbol
t
/ t
/ t
/ t
/ t
/ t
VPWH
QVVL
Typical values measured at T
Excludes external system-level overhead.
Sampled, but not 100% tested.
Write pulse width (t
F-WE# going high (whichever goes high first). Hence, t
high (t
F-WE# going low (whichever goes low first). Hence, t
Refer to
Sampled, but not 100% tested.
EHQV1
EHQV2
EHQV3
EHRH1
EHRH2
Sym
t
VPEH
WPH
Flash AC Characteristics—Write Operations (Sheet 2 of 2)
See
maximum allowable input slew rate.
See
Flash Erase and Program Timings
Flash Erase and Program Timings
Table 5 “Flash Memory Command Definitions” on page 19
4-KW Parameter Block Program Time (Word)
32-KW Main Block Program Time (Word)
0.25 µm Word Program Time
0.13 µm and 0.18 µm Word Program Time
4-KW Parameter Block Erase Time (Word)
32-KW Main Block Erase Time (Word)
Program Suspend Latency
Erase Suspend Latency
) is defined from F-CE# or F-WE# going high (whichever goes high first) to F-CE# or
Figure 4 “Input/Output Reference Waveform” on page 30
Figure 7 “AC Waveform: Flash Program and Erase Operations” on page
F-V
F-V
Intel
PP
PP
WP
®
Hold from Valid SRD
Setup to F-WE# (F-CE#) Going High
) is defined from F-CE# or F-WE# going low (whichever goes low last) to F-CE# or
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Parameter
CASE
Order Number: 252636, Revision: 004
Parameter
= +25 °C and nominal voltages.
WPH
WP
= t
= t
F-V
Note
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
WHWL
WLWH
3
3
PP
= t
= t
for valid A
EHEL
ELEH
Typ
0.10
0.8
0.5
1.65 V– 3.3 V
22
12
1
5
5
Product
Density
(1)
Voltage
(1)
Range
= t
= t
Note
3
3
WHEL
WLEH
IN
for timing measurements and
or D
Max
0.30
200
200
2.4
10
20
= t
4
5
200 200
= t
-70
Mi
n
0
IN
EHWL.
ELWH
.
16-Mbit
-90
Mi
n
0
. Similarly, write pulse width
Typ
2.7 V - 3.3 V
0.03
0.24
11.4 V– 12.6 V
0.4
0.6
8
8
5
5
(1)
Min
200
110
0
-
35.
Min
200
-70
Max
0.12
185
185
32-Mbit
10
20
0
1
4
5
Datasheet
Min
200
-90
0
Unit
µs
µs
µs
s
s
s
s
Uni
ns
ns
t