RD38F1020C0ZBL0S B93 Intel, RD38F1020C0ZBL0S B93 Datasheet - Page 10

• Manufacturer Part Number: RD38F1020C0ZBL0S B93
• Manufacturer: Intel

Specifications of RD38F1020C0ZBL0S B93

• Operating Supply Voltage (max): 3.3V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

C3 SCSP Flash Memory
Table 2.
26 Aug 2005
10
F-RP#
F-WP#
F-VCC
F-VCCQ
S-VCC
F-VPP
F-VSS
S-VSS
NC
Symbol
SUPPLY
SUPPLY
SUPPLY
SUPPLY
SUPPLY
SUPPLY
INPUT /
INPUT
INPUT
Intel
Type
®
Intel
Advanced+ Boot Block SCSP Ball Descriptions (Sheet 2 of 2)
FLASH RESET/DEEP POWER-DOWN: Uses two voltage levels (V
power-down mode.
FLASH WRITE PROTECT: Controls the lock-down function of the flexible Locking feature.
See
FLASH POWER SUPPLY: [2.7 V–3.3 V] Supplies power for device core operations.
FLASH I/O POWER SUPPLY: [2.7 V–3.3 V] Supplies power for device I/O operations.
SRAM POWER SUPPLY: [2.7 V–3.3 V] Supplies power for device operations.
See
connections.
FLASH PROGRAM/ERASE POWER SUPPLY: [1.65 V–3.3 V or 11.4 V–12.6 V] Operates as an
input at logic levels to control complete flash memory protection. Supplies power for accelerated
flash memory program and erase operations in 12 V ± 5% range. This ball cannot be left floating.
Lower F-V
Set F-V
F-V
Note:
Raise F-V
5% to F-V
the parameter blocks. F-V
FLASH GROUND: For all internal circuitry. All ground inputs must be connected.
SRAM GROUND: For all internal circuitry. All ground inputs must be connected.
NOT CONNECTED: Internally disconnected within the device.
®
• When F-RP# is at logic low, the device is in reset/deep power-down mode, which drives
• When F-RP# is at logic high, the device is in standard operation.
• When F-RP# transitions from logic-low to logic-high, the device resets all blocks to locked and
• When F-WP# is a logic low, the lock-down mechanism is enabled and blocks marked
• When F-WP# is logic high, the lock-down mechanism is disabled. Blocks previously
Advanced+ Boot Block Flash Memory (C3) SCSP Family
PP
the outputs to High-Z, resets the Write State Machine, and minimizes current levels (I
defaults to the read array mode.
lock-down cannot be unlocked through software. After F-WP# goes low, any blocks previously
marked lock-down revert to that state.
locked-down are now locked, and can be unlocked or locked through software.
Section 7.0, “System Design Considerations” on page 41
Section 7.2.2, “F-VCC, F-VPP and F-RP# Transition” on page 42
can drop as low as 1.65 V to allow for resistor or diode drop from the system supply.
PP
If F-V
1.65 V to modify in-system flash memory.
PP
PP
Order Number: 252636, Revision: 004
= F-V
PP
can be applied for a maximum of 1000 cycles on the main blocks and 2500 cycles on
to 12 V ± 5% for faster program and erase in a production environment. 12 V ±
≤ V
PP
CC
is driven by a logic signal, then V
PPLK
for in-system read, program and erase operations. In this configuration,
, to protect all contents against Program and Erase commands.
PP
can be connected to 12 V for a total of 80 hours maximum.
Name and Function
IH =
1.65 V. That is, F-V
for details on block locking.
IL
, V
for details of power
IH
PP
) to control reset/deep
must remain above
Datasheet
CCD
).