RD38F1020C0ZBL0S B93 Intel, RD38F1020C0ZBL0S B93 Datasheet - Page 30

• Manufacturer Part Number: RD38F1020C0ZBL0S B93
• Manufacturer: Intel

Specifications of RD38F1020C0ZBL0S B93

• Operating Supply Voltage (max): 3.3V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

C3 SCSP Flash Memory
Table 13.
Figure 4.
Figure 5.
26 Aug 2005
30
V
V
V
V
V
V
V
V
V
Notes:
1.
2.
Symbol
IL
IH
OL
OH
PPLK
PP1
PP2
LKO
LKO2
Erase and Program are inhibited when F-V
V
Applying F-V
blocks and 2500 cycles on the parameter blocks. F-V
Section 4.2.1
PP2
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
F-V
F-V
Operations
V
V
.
CC
CCQ
PP
PP
DC Characteristics
Input/Output Reference Waveform
Test Configuration
Note:
Prog/Erase Lock Voltage
Note:
Prog/Erase Lock Voltage
Lock-Out Voltage
during Program / Erase
pp
for details.
Parameter
= 11.4V–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main
Intel
V
0.0
C
AC test inputs are driven at V
timing ends, at V
when V
CC
L
includes jig capacitance.
®
Advanced+ Boot Block Flash Memory (C3) SCSP Family
CCQ
INPUT
= V
Order Number: 252636, Revision: 004
CCQ
CCQ
Min.
/2. Input rise and fall times (10%–90%) <10 ns. Worst case speed conditions are
Device
Under Test
SRAM
SRAM
SRAM
SRAM
Flash/
Flash/
Flash/
Flash/
Flash
Flash
Flash
Flash
pp
Device
< V
CCQ
V
PPLK
CC
2
for a logic “1” and 0.0V for a logic “0.” Input timing begins, and output
Note
pp
1,2
and not guaranteed outside the valid F-V
1
1
may be connected to 12 V for a total of 80 hours maximum. See
TEST POINTS
V
–0.10
–0.2
1.65
11.4
Min
2.7 V – 3.3 V
2.3
CC
0.1
1.5
1.2
–
C
Max
+0.2
0.10
12.6
L
V
0.6
1.0
3.3
CC
Units
V
V
V
V
V
V
V
V
Out
F-V
I
F-V
I
Complete Write Protection
OL
OH
V
pp
CC
CC
= 100 µA
CC
2
= –100 µA
Test Conditions
ranges of V
/S-V
/S-V
CC
CC
OUTPUT
= V
= V
Datasheet
PP1
CC
CC
Min
Min
and