S29GL128P10TFI020 Spansion Inc., S29GL128P10TFI020 Datasheet - Page 65

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S29GL128P10TFI020

Manufacturer Part Number
S29GL128P10TFI020
Description
IC 128M PAGE-MODE FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29GL128P10TFI020

Cell Type
NOR
Density
128Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
110mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Compliant

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Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Part Number:
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Notes
1. Not 100% tested.
2. See
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with V
November 17, 2010 S29GL-P_00_A13
JEDEC
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
11.7.4
EHWH
AVWL
DVEH
EHDX
GHEL
WLEL
ELAX
ELEH
EHEL
AVAV
Parameter
DC Characteristics on page 56
t
t
WHWH1
WHWH2
t
t
t
t
CEPH
OEPH
t
Std.
t
GHEL
t
t
t
t
ASO
t
AHT
t
t
t
CPH
WC
WS
WH
AH
DS
DH
CP
AS
S29GL-P Alternate CE# Controlled Erase and Program Operations
Description
(Notes)
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to CE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
for more information.
(Note 1)
(Note 2)
(Note 2)
D a t a
S29GL-P MirrorBit
IO
(Note 2)
S h e e t
= 1.8 V and V
CC
®
Flash Family
= 3.0 V.
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
90
90
100
100
Speed Options
13.5
480
110
110
0.5
15
45
30
20
20
35
30
15
60
54
0
0
0
0
0
0
120
120
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
65

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