S29GL128P10TFI020 Spansion Inc., S29GL128P10TFI020 Datasheet - Page 27

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S29GL128P10TFI020

Manufacturer Part Number
S29GL128P10TFI020
Description
IC 128M PAGE-MODE FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29GL128P10TFI020

Cell Type
NOR
Density
128Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
110mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Compliant

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Manufacturer
Quantity
Price
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Manufacturer:
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Manufacturer:
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Part Number:
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Manufacturer:
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November 17, 2010 S29GL-P_00_A13
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
 Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
 Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
 Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
 Writing anything other than the Program to Buffer Flash Command after the specified number of “data
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-
Buffer-Abort reset” command sequence is required when using the write buffer Programming features in
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices
are capable of handling multiple write buffer programming operations on the same write buffer address range
without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
during the “write buffer data loading” stage of the operation.
load” cycles.
D a t a
S29GL-P MirrorBit
S h e e t
®
Flash Family
27

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