PIC16LF1827-E/ML Microchip Technology, PIC16LF1827-E/ML Datasheet - Page 356
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PIC16LF1827-E/ML
Manufacturer Part Number
PIC16LF1827-E/ML
Description
18 Pin, 7 KB Flash, 384 Bytes RAM, 32 MHz Int. Osc, 16 I/0, Enhanced Mid Range C
Manufacturer
Microchip Technology
Series
PIC® XLP™ 16Fr
Specifications of PIC16LF1827-E/ML
Core Processor
PIC
Core Size
8-Bit
Speed
32MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
7KB (4K x 14)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Processor Series
PIC16LF
Core
PIC
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PIC16F/LF1826/27
29.5
DS41391C-page 356
DC CHARACTERISTICS
D110
D111
D112
D113
D114
D115
D116
D117
D118
D119
D120
D121
D122
D123
D124
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
Memory Programming Requirements
V
I
V
I
I
E
V
T
T
T
E
V
T
T
PPPGM
DDPGM
Sym.
DDP
PEW
DEW
RETD
REF
IW
RETD
IHH
D
DRW
P
PR
only and are not tested.
Self-write and Block Erase.
Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
V
V
Current on MCLR/V
Write
Current on V
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
for Bulk Erase
for Write or Row Erase
for Read/Write
for Read
Characteristic
DD
during Erase/Write
PP
PP
during Erase/
/RA5 pin
(2)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
100K
Min.
10K
V
min.
V
min.
V
min.
1M
8.0
2.7
40
40
—
—
—
—
—
DD
DD
DD
PP
output. Circuitry to limit the ICD 2 V
Typ†
10M
4.0
—
—
—
—
—
—
—
—
—
—
—
2
Max.
max.
max.
max.
max.
V
V
V
V
9.0
5.0
2.5
1.0
5.0
10
—
—
—
—
—
DD
DD
DD
DD
Units
Year
Year
E/W
E/W
E/W
mA
mA
mA
A
ms
ms
V
V
V
V
V
+125°C
2010 Microchip Technology Inc.
(Note 3, Note 4)
-40C to +85C
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 1)
Provided no other
specifications are violated
PP
voltage must be
Conditions
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