PIC12F609-E/MS Microchip Technology, PIC12F609-E/MS Datasheet - Page 32
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PIC12F609-E/MS
Manufacturer Part Number
PIC12F609-E/MS
Description
1.75KB Flash, 64B RAM, 6 I/O, 8MHz Internal Oscillator 8 MSOP 3x3mm TUBE
Manufacturer
Microchip Technology
Series
PIC® 12Fr
Datasheets
1.PIC12F609T-ISN.pdf
(212 pages)
2.PIC12F609T-ISN.pdf
(8 pages)
3.PIC12F609T-ISN.pdf
(26 pages)
4.PIC12F609T-ISN.pdf
(8 pages)
Specifications of PIC12F609-E/MS
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
5
Program Memory Size
1.75KB (1K x 14)
Program Memory Type
FLASH
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Processor Series
PIC12F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
RS- 232 , USB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
5
Number Of Timers
2
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Details
PIC12F609/615/617/12HV609/615
3.4
A word of the Flash program memory may only be
written to if the word is in an unprotected segment of
memory.
Flash program memory must be written in four-word
blocks. See Figure 3-2 and Figure 3-3 for more details.
A block consists of four words with sequential
addresses, with a lower boundary defined by an
address, where PMADRL<1:0> = 00. All block writes to
program memory are done as 16-word erase by four-
word write operations. The write operation is edge-
aligned and cannot occur across boundaries.
To write program data, it must first be loaded into the
buffer registers (see Figure 3-2). This is accomplished
by first writing the destination address to PMADRL and
PMADRH and then writing the data to PMDATL and
PMDATH. After the address and data have been set
up, then the following sequence of events must be
executed:
1.
2.
All four buffer register locations should be written to
with correct data. If less than four words are being
written to in the block of four words, then a read from
the program memory location(s) not being written to
must be performed. This takes the data from the
program location(s) not being written and loads it into
the PMDATL and PMDATH registers. Then the
sequence of events to transfer data to the buffer
registers must be executed.
To transfer data from the buffer registers to the program
memory, the PMADRL and PMADRH must point to the
last location in the four-word block (PMADRL<1:0> =
11). Then the following sequence of events must be
executed:
1.
2.
The user must follow the same specific sequence to
initiate the write for each word in the program block,
writing each program word in sequence (000, 001,
010, 011). When the write is performed on the last
word (PMADRL<1:0> = 11), a block of sixteen words is
automatically erased and the content of the four-word
buffer registers are written into the program memory.
After the “BSF PMCON1,WR” instruction, the processor
requires two cycles to set up the erase/write operation.
The user must place two NOP instructions after the WR
bit is set. Since data is being written to buffer registers,
the writing of the first three words of the block appears
to occur immediately. The processor will halt internal
operations for the typical 4 ms, only during the cycle in
DS41302D-page 32
Write 55h, then AAh, to PMCON2 (Flash
programming sequence).
Set the WR control bit of the PMCON1 register.
Write 55h, then AAh, to PMCON2 (Flash pro-
gramming sequence).
Set control bit WR of the PMCON1 register to
begin the write operation.
Writing the Flash Program
Memory
which the erase takes place (i.e., the last word of the
sixteen-word block erase). This is not Sleep mode as
the clocks and peripherals will continue to run. After
the four-word write cycle, the processor will resume
operation with the third instruction after the PMCON1
write instruction. The above sequence must be
repeated for the higher 12 words.
3.5
There are conditions when the device should not write
to the program memory. To protect against spurious
writes, various mechanisms have been built in. On
power-up, WREN is cleared. Also, the Power-up Timer
(64 ms duration) prevents program memory writes.
The write initiate sequence and the WREN bit help
prevent an accidental write during brown-out, power
glitch or software malfunction.
3.6
When the device is code-protected, the CPU is able to
read and write unscrambled data to the program
memory. The test mode access is disabled.
3.7
When the program memory is write-protected, the
CPU can read and execute from the program memory.
The portions of program memory that are write pro-
tected can be modified by the CPU using the PMCON
registers, but the protected program memory cannot
be modified using ICSP mode.
Protection Against Spurious Write
Operation During Code-Protect
Operation During Write Protect
2010 Microchip Technology Inc.