PIC12F609-E/MS Microchip Technology, PIC12F609-E/MS Datasheet - Page 154
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
PIC12F609-E/MS
Manufacturer Part Number
PIC12F609-E/MS
Description
1.75KB Flash, 64B RAM, 6 I/O, 8MHz Internal Oscillator 8 MSOP 3x3mm TUBE
Manufacturer
Microchip Technology
Series
PIC® 12Fr
Datasheets
1.PIC12F609T-ISN.pdf
(212 pages)
2.PIC12F609T-ISN.pdf
(8 pages)
3.PIC12F609T-ISN.pdf
(26 pages)
4.PIC12F609T-ISN.pdf
(8 pages)
Specifications of PIC12F609-E/MS
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
5
Program Memory Size
1.75KB (1K x 14)
Program Memory Type
FLASH
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Processor Series
PIC12F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
RS- 232 , USB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
5
Number Of Timers
2
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Details
- PIC12F609T-ISN PDF datasheet
- PIC12F609T-ISN PDF datasheet #2
- PIC12F609T-ISN PDF datasheet #3
- PIC12F609T-ISN PDF datasheet #4
- Current page: 154 of 212
- Download datasheet (2Mb)
PIC12F609/615/617/12HV609/615
16.9
DS41302D-page 154
Standard Operating Conditions (unless otherwise stated)
Operating temperature
TH01
TH02
TH03
TH04
TH05
TH06
TH07
Note 1:
Param
No.
2:
*
Thermal Considerations
T
PD
P
P
P
These parameters are characterized but not tested.
I
T
DD
JA
JC
A
DIE
INTERNAL
I
DER
/
O
= Ambient temperature.
Sym
is current to run the chip alone without driving any load on the output pins.
Thermal Resistance
Junction to Ambient
Thermal Resistance
Junction to Case
Die Temperature
Power Dissipation
Internal Power Dissipation
I/O Power Dissipation
Derated Power
-40°C T
Characteristic
A
+125°C
149.5*
84.6*
41.2*
39.9*
211*
150*
Typ
3.0*
60*
44*
39*
9*
—
—
—
—
Units
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
C/W
W
W
W
W
C
8-pin PDIP package
8-pin SOIC package
8-pin MSOP package
8-pin DFN 3x3mm package
8-pin DFN 4x4mm package
8-pin PDIP package
8-pin SOIC package
8-pin MSOP package
8-pin DFN 3x3mm package
8-pin DFN 4x4mm package
PD = P
P
(NOTE 1)
P
V
P
(NOTE 2)
OH
INTERNAL
I
DER
/
O
))
= (I
= PD
INTERNAL
OL
= I
MAX
2010 Microchip Technology Inc.
* V
DD
Conditions
(T
OL
+ P
x V
DIE
) + (I
I
DD
/
O
- T
A
OH
)/
JA
* (V
DD
-
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