PIC12F519-E/MC Microchip Technology, PIC12F519-E/MC Datasheet - Page 19

• Manufacturer Part Number: PIC12F519-E/MC
• Description: 1.5KB Flash Program, 64B Flash Data, 8MHz Internal Oscillator 8 DFN 2X3mm TUBE
• Manufacturer: Microchip Technology
• Series: PIC® 12Fr

Specifications of PIC12F519-E/MC

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: POR, WDT
• Number Of I /o: 5
• Program Memory Size: 1.5KB (1K x 12)
• Program Memory Type: FLASH
• Ram Size: 41 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-DFN
• Processor Series: PIC12F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 41 B
• Interface Type: USB
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 1
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC164334 - MODULE SOCKET FOR 8L 2X3MM DFNXLT08DFN2 - SOCKET TRANSITION ICE 14DIP/8DFN
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

6.0
TABLE 6-1:
© 2007 Microchip Technology Inc.
Genera
V
V
T
V
V
V
V
I
I
I
T
T
T
Serial Program/Verify
T
T
T
T
T
T
T
DDPROG
DDERA
PP
SET
ERA
VHHR
PROG
PPDP
HLD
HLD
DLY
DLY
DLY
DIS
IHH
IHL
IH
IL
DDOK
PROG
Sym.
1
1
1
1
2
3
0
1
PROGRAM/VERIFY MODE ELECTRICAL CHARACTERISTICS
l
V
mode entry
Voltage on MCLR to be in Normal mode
MCLR rise time (V
entry
Clock (RB1) and Data (RB0) input high level
Clock (RB1) and Data (RB0) input low level
Minimum V
High voltage on MCLR for programming
I
program memory
I
memory
MCLR pin current during Program/Verify
mode
Programming time
Hold time after V
ISPCLK, ISPDATA hold time after MCLR↑
(Program/Verify mode selection pattern setup
time)
Data in setup time before clock↓
Data in hold time after clock↓
Data input not driven to next clock input (delay
required between command/data or
command/command)
Delay between clock↓ to clock↑ of next
command or data
Clock↑ to data out valid (during Read Data)
Bulk Erase Time
High Voltage Discharge Time
DD
DD
PP
level for programming operations,
level for Bulk Erase operations, program
high voltage on MCLR for Program/Verify
AC/DC TIMING REQUIREMENTS
DD
Characteristics
to perform Bulk Erase
PP
SS
↑
to V
HH
) for Test mode
AC TARGETS
0.85*V
Min.
1000
12.5
12.5
V
100
100
100
4.5
1.0
1.0
—
—
—
—
—
80
5
5
4
SS
DD
Typ.
13.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
0.15*V
DD
Max.
2000
13.5
13.5
1.0
5.5
1.8
1.8
0.4
10
—
—
—
—
—
—
—
—
+ 1.0
DD
PIC12F519
Units
mA
mA
mA
ms
μs
μs
μs
μs
ns
ns
μs
μs
ns
μs
V
V
V
V
V
V
Total time to per-
form both stages
of Bulk Erase and
accept the next
command.
Time to discharge
high voltage.
DS41316B-page 19
Conditions