BCX70KE6327XT Infineon Technologies, BCX70KE6327XT Datasheet - Page 4

• Manufacturer Part Number: BCX70KE6327XT
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BCX70KE6327XT

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 100@10uA@5V|380@2mA@5V|100@50mA@1V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.85@0.25mA@10mA|1.05@1.25mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.25mA@10mA|0.55@1.25mA@50mA V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 6 V
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 100
• Power Dissipation: 330mW
• Frequency (max): 250MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

DC Electrical Characteristics
Parameter
Characteristics
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage
I
I
I
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 10 µA, V
= 2 mA, V
= 50 mA, V
CE
B
B
B
B
CE
CE
= 0.25 mA
= 1.25 mA
= 0.25 mA
= 1.25 mA
= 5 V
= 5 V
= 1 V
1)
1)
1)
4
Symbol
V
V
V
CEsat
BEsat
BE(ON)
min.
0.58
-
-
-
-
-
-
Values
0.12
0.83
0.52
0.65
0.78
typ.
0.2
0.7
BCW60, BCX70
max.
0.25
0.55
0.85
1.05
0.7
2007-04-20
-
-
Unit
V