BCX70KE6327XT Infineon Technologies, BCX70KE6327XT Datasheet

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BCX70KE6327XT

Manufacturer Part Number
BCX70KE6327XT
Description
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R
Manufacturer
Infineon Technologies
Type
NPNr
Datasheet

Specifications of BCX70KE6327XT

Package
3SOT-23
Supplier Package
SOT-23
Pin Count
3
Minimum Dc Current Gain
100@10uA@5V|380@2mA@5V|100@50mA@1V
Maximum Operating Frequency
250(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.85@0.25mA@10mA|1.05@1.25mA@50mA V
Maximum Collector Emitter Saturation Voltage
0.25@0.25mA@10mA|0.55@1.25mA@50mA V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
6 V
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
45V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
100
Power Dissipation
330mW
Frequency (max)
250MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant
NPN Silicon AF Transistors
Type
BCW60B
BCW60C
BCW60D
BCW60FF
BCX70G
BCX70H
BCX70J
BCX70K
1
Pb-containing package may be available upon special request
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Marking
ABs
ACs
ADs
AFs
AGs
AHs
AJs
AKs
1)
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3
BCW60, BCX70
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
2007-04-20
1
2

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BCX70KE6327XT Summary of contents

Page 1

NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage BCW60, ...60FF BCX70 Collector-base voltage BCW60, ...60FF BCX70 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation T 71 °C S Junction temperature Storage temperature Thermal Resistance Parameter 1) Junction - ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BCW60, ...60FF mA BCX70 C B Collector-base breakdown voltage µA, ...

Page 4

DC Electrical Characteristics Parameter Characteristics Collector-emitter saturation voltage Base emitter saturation voltage mA 0.25 mA ...

Page 5

AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance MHz EB ...

Page 6

DC current gain BCW 60/BCX 100 ˚ ˚C -50 ˚ ...

Page 7

Collector cutoff current I CBO CEmax BCW 60/BCX CBO 3 10 max typ Collector-base capacitance C Emitter-base capacitance ...

Page 8

Permissible Pulse Load totmax totDC p BCW 60/BCX tot max tot ...

Page 9

Noise figure Sopt BCW 60/BCX Noise figure 5V, ...

Page 10

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 11

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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