IRFH8334TRPBF International Rectifier, IRFH8334TRPBF Datasheet - Page 5
![MOSFET N-CH 30V 44A 5X6 PQFN](/photos/39/47/394756/4664378_sml.jpg)
IRFH8334TRPBF
Manufacturer Part Number
IRFH8334TRPBF
Description
MOSFET N-CH 30V 44A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH8334TRPBF.pdf
(9 pages)
Specifications of IRFH8334TRPBF
Input Capacitance (ciss) @ Vds
1180pF @ 10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
3.2W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
13.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
44 A
Power Dissipation
30 W
Gate Charge Qg
7.1 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH8334TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH8334TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
30
25
20
15
10
Fig 15a. Switching Time Test Circuit
5
0
R G
20V
V DS
V GS, Gate -to -Source Voltage (V)
t p
5
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
10
T J = 25°C
T J = 125°C
15V
DRIVER
15
I D = 20A
+
-
+
-
V DD
A
20
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
160
140
120
100
90%
V
80
60
40
20
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
IRFH8334PbF
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 20A
t
f
125
I D
3.7A
8.2A
150
5