IRFH8334TRPBF International Rectifier, IRFH8334TRPBF Datasheet - Page 3
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IRFH8334TRPBF
Manufacturer Part Number
IRFH8334TRPBF
Description
MOSFET N-CH 30V 44A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH8334TRPBF.pdf
(9 pages)
Specifications of IRFH8334TRPBF
Input Capacitance (ciss) @ Vds
1180pF @ 10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
3.2W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
13.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
44 A
Power Dissipation
30 W
Gate Charge Qg
7.1 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH8334TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH8334TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
1000
0.01
1000
1000
100
0.1
100
100
Fig 3. Typical Transfer Characteristics
10
1.0
10
10
1
Fig 1. Typical Output Characteristics
0.1
1
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
2.5V
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1
C rss
C oss
C iss
3
T J = 25°C
4
≤ 60μs PULSE WIDTH
Tj = 25°C
10
f = 1 MHZ
V DS = 15V
≤60μs PULSE WIDTH
10
5
TOP
BOTTOM
100
6
7
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
100
8
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
0.1
14.0
12.0
10.0
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1
8.0
6.0
4.0
2.0
0.0
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 20A
V GS = 10V
I D = 20A
V DS , Drain-to-Source Voltage (V)
2
2.5V
T J , Junction Temperature (°C)
V DS = 24V
V DS = 15V
V DS = 6.0V
4
Q G , Total Gate Charge (nC)
1
6
IRFH8334PbF
8
10
≤ 60μs PULSE WIDTH
Tj = 150°C
10 12 14 16 18 20
TOP
BOTTOM
100
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
3