IRFH8334TRPBF International Rectifier, IRFH8334TRPBF Datasheet - Page 2
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IRFH8334TRPBF
Manufacturer Part Number
IRFH8334TRPBF
Description
MOSFET N-CH 30V 44A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH8334TRPBF.pdf
(9 pages)
Specifications of IRFH8334TRPBF
Input Capacitance (ciss) @ Vds
1180pF @ 10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
3.2W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
13.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
44 A
Power Dissipation
30 W
Gate Charge Qg
7.1 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH8334TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH8334TRPBF
Manufacturer:
IR
Quantity:
20 000
IRFH8334PbF
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Avalanche Characteristics
Diode Characteristics
R
R
R
R
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
GS(th)
AS
SD
DS(on)
G
iss
oss
rss
g
g
sw
oss
rr
θJC
θJC
θJA
θJA
Q
Q
Q
Q
GS(th)
DSS
2
gs1
gs2
gd
godr
DSS
(<10s)
(Bottom)
(Top)
/ΔT
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ã
Parameter
gs2
Parameter
+ Q
gd
)
g
g
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
44
0.021
Typ.
1180
Typ.
11.2
–––
-6.6
–––
–––
–––
–––
–––
260
110
–––
–––
–––
7.2
1.8
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
8.3
7.0
4.6
15
14
13
19
Max. Units
Max. Units
Typ.
13.5
2.35
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
9.0
1.0
1.0
25
20
29
mV/°C
V/°C
mΩ
μA
nA
nC
nC
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
Typ.
–––
–––
–––
–––
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 380 A/μs
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
GS
DS
J
J
G
= 20A
= 20A
=1.8Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 10V, I
= 10V, V
= 15V
= 4.5V
= 16V, V
= 30V, V
= 0V
= 10V
GS
, I
Max.
D
35
20
D
S
F
D
D
= 250μA
D
Conditions
GS
GS
DS
GS
GS
Conditions
Max.
= 25μA
= 20A, V
= 20A, V
= 20A
= 20A
4.1
= 16A
37
39
26
= 0V
= 0V, T
= 15V, I
= 0V
= 4.5V
eÃ
D
e
e
= 1.0mA
www.irf.com
DD
GS
J
D
= 125°C
= 15V
= 20A
= 0V
G
Units
°C/W
Units
mJ
e
A
D
S