MMBV2109LT1 ON Semiconductor, MMBV2109LT1 Datasheet - Page 4

• Manufacturer Part Number: MMBV2109LT1
• Description: DIODE TUNING SS 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBV2109LT1

• Capacitance @ Vr, F: 36.3pF @ 4V, 1MHz
• Capacitance Ratio: 3.2
• Capacitance Ratio Condition: C2/C30
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Q @ Vr, F: 200 @ 4V, 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBV2109LT1OSTR

A
A1
E
1
3
D
e
2
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
VIEW C
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT*
L1
L
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
q
0.25
c
4
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
STYLE 8:
0.079
DIM
A1
H
2.0
PIN 1. ANODE
L1
A
b
D
E
c
e
L
E
inches
mm
2. NO CONNECTION
3. CATHODE
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
INCHES
0.040
0.002
0.018
0.005
0.051
0.075
0.008
0.021
0.094
NOM
0.114
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX