MMBV2109LT1 ON Semiconductor, MMBV2109LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBV2109LT1
• Description: DIODE TUNING SS 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBV2109LT1

• Capacitance @ Vr, F: 36.3pF @ 4V, 1MHz
• Capacitance Ratio: 3.2
• Capacitance Ratio Condition: C2/C30
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Q @ Vr, F: 200 @ 4V, 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBV2109LT1OSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
1. C
(C
bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
TR is the ratio of C
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
Specification Brochure, BRD8011/D.
Q + 2pfC
MMBV2101LT1
MMBV2101LT1G
MMBV2101L
MV2101
MV2101G
MMBV2103LT1
MMBV2105LT1
MMBV2105LT1G
MMBV2105L
MV2105
MV2105G
MMBV2107LT1
MMBV2107LT1G
MMBV2107L
MMBV2108LT1
MMBV2108LT1G
LV2209
MMBV2109LT1
MMBV2109LT1G
MMBV2109L
MV2109
MV2109G
T
suffix when ordering any of these devices in bulk.
= C
T
, DIODE CAPACITANCE
Device
C
G
+ C
J
). C
T
is measured at 1.0 MHz using a capacitance
Marking
MV2101
MV2101
MV2105
MV2105
MV2109
MV2109
LV2209
T
M4G
M4G
M4G
4W
4W
4W
4H
4U
4U
4U
4X
4X
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
4J
4J
4J
measured at 2.0 Vdc divided by C
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
1,000 per Box
1,000 per Box
1,000 per Box
1,000 per Box
1,000 per Box
1,000 per Box
1,000 per Box
PARAMETER TEST METHODS
Bulk (Note 1)
Bulk (Note 1)
Bulk (Note 1)
Bulk (Note 1)
Shipping
http://onsemi.com
†
T
2
V
13.5
13.5
13.5
13.5
13.5
19.8
19.8
19.8
24.3
24.3
29.7
29.7
29.7
29.7
29.7
29.7
C
Min
R
6.1
6.1
6.1
6.1
6.1
9.0
T
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length [ 1/16″.
4. TC
TC
MHz, T
= +85°C in the following equation, which defines TC
Accuracy limited by measurement of C
= 4.0 Vdc, f = 1.0 MHz
, Diode Capacitance
TC C +
COEFFICIENT
C
is guaranteed by comparing C
C
Nom
, DIODE CAPACITANCE TEMPERATURE
6.8
6.8
6.8
6.8
6.8
pF
A
10
15
15
15
15
15
22
22
22
27
27
33
33
33
33
33
33
C T () 85°C) – C T (–65°C)
= −65°C with C
Max
16.5
16.5
16.5
16.5
16.5
24.2
24.2
24.2
29.7
29.7
36.3
36.3
36.3
36.3
36.3
36.3
7.5
7.5
7.5
7.5
7.5
11
85 ) 65
Q, Figure of Merit
T
V
at V
f = 50 MHz
R
= 4.0 Vdc,
Typ
450
450
450
450
450
400
400
400
400
400
400
350
350
350
300
300
200
200
200
200
200
200
R
= 4.0 Vdc, f = 1.0 MHz, T
T
at V
·
C T (25°C)
T
R
10 6
to ±0.1 pF.
= 4.0 Vdc, f = 1.0
TR, Tuning Ratio
Min
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
f = 1.0 MHz
C
Typ
2
2.7
2.7
2.7
2.7
2.7
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
2.9
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
/C
30
C
Max
:
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
A