MMBV2109LT1 ON Semiconductor, MMBV2109LT1 Datasheet - Page 3

• Manufacturer Part Number: MMBV2109LT1
• Description: DIODE TUNING SS 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBV2109LT1

• Capacitance @ Vr, F: 36.3pF @ 4V, 1MHz
• Capacitance Ratio: 3.2
• Capacitance Ratio Condition: C2/C30
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Q @ Vr, F: 200 @ 4V, 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBV2109LT1OSTR

1000
5000
3000
2000
1000
1.040
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
500
200
100
500
300
200
100
5.0
2.0
1.0
50
20
10
50
30
20
10
1.0
0.1
Figure 4. Figure of Merit versus Reverse Voltage
−75
Figure 2. Normalized Diode Capacitance versus
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
−50
2.0
0.2
MMBV2109LT1
−25
T
V
J
R
, JUNCTION TEMPERATURE (°C)
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
Junction Temperature
, REVERSE VOLTAGE (VOLTS)
3.0
0
0.3
5.0
+25
NORMALIZED TO C
7.0
V
MMBV2101LT1/MV2101
Figure 1. Diode Capacitance versus Reverse Voltage
at T
R
0.5
TYPICAL DEVICE CHARACTERISTICS
= (CURVE)
+50
A
= 25°C
10
V
R
V
= 2.0 Vdc
R
T
f = 1.0 MHz
A
+75
= 30 Vdc
= 25°C
T
f = 50 MHz
A
V
T
= 25°C
R
V
1.0
R
= 4.0 Vdc
20
http://onsemi.com
+100
, REVERSE VOLTAGE (VOLTS)
+125
30
3
1000
5000
3000
2000
2.0
500
300
200
100
0.50
0.20
0.10
0.05
0.02
0.01
100
50
30
20
10
5.0
2.0
1.0
50
20
10
10
0
Figure 3. Reverse Current versus Reverse Bias
T
V
Figure 5. Figure of Merit versus Frequency
A
R
3.0
= 25°C
= 4.0 Vdc
5.0
20
V
5.0
R
, REVERSE VOLTAGE (VOLTS)
30
10
f, FREQUENCY (MHz)
Voltage
50
15
10
70
T
T
MMBV2101LT1/MV2101
T
MMBV2109LT1/MV2109
A
A
A
= 125°C
= 25°C
= 75°C
20
100
20
25
200
30
250
30