BT136-600E,127 NXP Semiconductors, BT136-600E,127 Datasheet - Page 4

• Manufacturer Part Number: BT136-600E,127
• Description: TRIAC 600V 4A SOT78
• Manufacturer: NXP Semiconductors

Specifications of BT136-600E,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 25A, 27A
• Current - On State (it (rms) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Logic - Sensitive Gate
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 27 A
• On-state Rms Current (it Rms): 4 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.7 V
• Gate Trigger Current (igt): 11 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.4 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933522910127::BT136-600E::BT136-600E

NXP Semiconductors
BT136-600E
Product data sheet
Fig 3.
Fig 4.
I
P
(W)
TSM
(A)
tot
30
25
20
15
10
8
6
4
2
0
5
0
values
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
0
1
conduction
(degrees)
angle
120
180
30
60
90
factor
form
1.57
2.8
2.2
1.9
a
4
1
10
All information provided in this document is subject to legal disclaimers.
2
Rev. 04 — 1 April 2011
10
2
3
10
3
4
120
number of cycles
90
60
30
= 180
I
BT136-600E
T
T
j(init)
I
T(RMS)
1/f
= 25 C max
© NXP B.V. 2011. All rights reserved.
(A)
003aae827
003aae831
I
TSM
t
10
5
4
4Q Triac
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