BT136-800E,127 NXP Semiconductors, BT136-800E,127 Datasheet

TRIAC 800V 4A SOT78

BT136-800E,127

Manufacturer Part Number
BT136-800E,127
Description
TRIAC 800V 4A SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.BT136-800E127.pdf (6 pages)

Specifications of BT136-800E,127

Package / Case
TO-220AB-3
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
25A, 27A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
4A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
27 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.7 V @ 5 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933599090127
BT136-800E
BT136-800E
Philips Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
plastic envelope, intended for use in
general
switching
applications, where high sensitivity is
required in all four quadrants.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/ s.
June 2001
Triacs
sensitive gate
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
DRM
GM
GM
G(AV)
tab
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
purpose
and
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
phase
bidirectional
control
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
G
T(RMS)
TSM
DRM
/dt = 0.2 A/ s
= 6 A; I
G
= 0.2 A;
tab
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
1
mb
j
1 2 3
= 25 ˚C prior to
107 ˚C
T2+ G+
T2+ G-
T2- G-
T2- G+
BT136-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
-600
600
MAX.
600E
600
25
1
4
MAX.
BT136 series E
Product specification
150
125
3.1
0.5
25
27
50
50
50
10
4
2
5
5
-800
800
MAX.
800E
800
25
4
Rev 1.400
UNIT
G
A/ s
A/ s
A/ s
A/ s
UNIT
T1
A
˚C
˚C
W
W
V
A
A
A
A
V
2
V
A
A
s

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BT136-800E,127 Summary of contents

Page 1

... T 107 ˚C mb full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT136 series E MAX. MAX. UNIT BT136- 600E 800E 600 800 SYMBOL MIN. MAX. UNIT -600 -800 1 - 600 ...

Page 2

... GT T2+ G+ T2+ G- T2 400 0 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / Product specification BT136 series E MIN. TYP. MAX. UNIT - - 3.0 K 3.7 K K/W MIN. TYP. MAX. UNIT - 2.2 ...

Page 3

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 time T 1.2 1 0.8 0.6 0.4 1000 - Product specification BT136 series E 107 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 107˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚C), versus junction temperature T ...

Page 4

... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT136 series E typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width 100 /dt versus junction temperature T ...

Page 5

... Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BT136 series E 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.400 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT136 series E Rev 1.400 ...

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