BT136-600E/L01,127 NXP Semiconductors, BT136-600E/L01,127 Datasheet
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BT136-600E/L01,127
Specifications of BT136-600E/L01,127
Related parts for BT136-600E/L01,127
BT136-600E/L01,127 Summary of contents
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... T 107 ˚C mb full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT136 series E MAX. MAX. UNIT BT136- 600E 800E 600 800 SYMBOL MIN. MAX. UNIT -600 -800 1 - 600 ...
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... GT T2+ G+ T2+ G- T2 400 0 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / Product specification BT136 series E MIN. TYP. MAX. UNIT - - 3.0 K 3.7 K K/W MIN. TYP. MAX. UNIT - 2.2 ...
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... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 time T 1.2 1 0.8 0.6 0.4 1000 - Product specification BT136 series E 107 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 107˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚C), versus junction temperature T ...
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... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT136 series E typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width 100 /dt versus junction temperature T ...
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... Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BT136 series E 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.400 ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT136 series E Rev 1.400 ...