BTA201W-800E,115 NXP Semiconductors, BTA201W-800E,115 Datasheet - Page 6

• Manufacturer Part Number: BTA201W-800E,115
• Description: TRIAC 800V 1A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BTA201W-800E,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 12mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 12.5A, 13.7A
• Current - On State (it (rms) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Logic - Sensitive Gate
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060125115::BTA201W-800E T/R::BTA201W-800E T/R

NXP Semiconductors
6. Static characteristics
Table 5.
T
BTA201W_SER_3
Product data sheet
Symbol
BTA201W-600E and BTA201W-800E
I
I
I
V
V
I
GT
L
H
D
j
T
GT
= 25 C unless otherwise specified.
Static characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
Conditions
V
V
V
I
V
V
V
T
D
D
D
D
D
D
T2+ G+
T2+ G
T2 G
T2+ G+
T2+ G
T2 G
= 1.4 A; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
DRM(max)
Rev. 03 — 13 March 2008
T
G
G
T
T
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; T
Figure 9
; T
j
= 125 C
j
= 125 C
Figure 8
Figure 7
Figure 10
Figure 11
1 A Three-quadrant triacs high commutation
BTA201W series E
Min
1
1
1
-
-
-
-
-
-
0.2
-
Typ
-
-
-
-
-
-
-
1.2
0.7
0.3
0.1
© NXP B.V. 2008. All rights reserved.
Max
10
10
10
12
20
12
12
1.5
1.5
-
0.5
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
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