BTA201W-800E,115 NXP Semiconductors, BTA201W-800E,115 Datasheet - Page 3

TRIAC 800V 1A SOT-223

BTA201W-800E,115

Manufacturer Part Number
BTA201W-800E,115
Description
TRIAC 800V 1A SOT-223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA201W-800E,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
12mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
12.5A, 13.7A
Current - On State (it (rms) (max)
1A
Voltage - Gate Trigger (vgt) (max)
1.5V
Triac Type
Logic - Sensitive Gate
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
13.7 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
12 mA
Forward Voltage Drop
1.5 V @ 1.4 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934060125115::BTA201W-800E T/R::BTA201W-800E T/R
NXP Semiconductors
BTA201W_SER_3
Product data sheet
Fig 1.
Fig 2.
P
(W)
I
tot
TSM
(A)
1.5
1.0
0.5
0.0
16
12
8
4
0
1
0
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
= conduction angle
0.2
0.4
10
Rev. 03 — 13 March 2008
0.6
1 A Three-quadrant triacs high commutation
0.8
10
2
BTA201W series E
number of cycles (n)
1
I
T
120
90
60
30
T
= 180
j(init)
I
T(RMS)
= 25 C max
T
© NXP B.V. 2008. All rights reserved.
003aab299
(A)
001aag959
I
TSM
t
1.2
10
3
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