BCV 61B E6327 Infineon Technologies, BCV 61B E6327 Datasheet - Page 3

• Manufacturer Part Number: BCV 61B E6327
• Description: TRANSISTOR NPN DOUBLE SOT-143
• Manufacturer: Infineon Technologies

Specifications of BCV 61B E6327

• Transistor Type: 2 NPN, Base Collector Junction
• Applications: Current Mirror
• Voltage - Rated: 30V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCV61BE6327XT; SP000010886

Electrical Characteristics at T
Parameter
Characteristics
Base-emitter forward voltage
I
I
Matching of transistor T1 and transistor T2
T
T
Thermal coupling of transistor T1 and
transistor T2
Maximum current of thermal stability of I
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
AC characteristics for transistor T1
Transition frequency
I
Collector-base capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 1 kHz,
Short-circuit input impedance
I
Open-circuit reverse voltage transf.ratio
I
Short-circuit forward current transf.ratio
I
Open-circuit output admittance
I
E
E
at I
C
C
C
C
C
C
A
A
CB
EB
= 10 µA
= 250 mA
= 10 mA, V
= 200 µA, V
= 1 mA, V
= 1 mA, V
= 1 mA, V
= 1 mA, V
= 25 °C
= 150 °C
E2
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 0.5mA and V
f = 200 Hz
CE
CE
CE
CE
1)
CE
CE
= 10 V, f = 1 kHz
= 10 V, f = 1 kHz
= 10 V, f = 1 kHz
= 10 V, f = 1 kHz
= 5 V, f = 100 MHz
T1: V
= 5 V, R
CE1
CE
= 5V
= 5V
S
= 2 k ,
A
= 25°C, unless otherwise specified.
C1
3
Symbol
V
I
I
f
C
C
F
h
h
h
h
C1
E2
T
11e
12e
21e
22e
BES
cb
eb
/ I
C2
min.
100
0.4
0.7
0.7
-
-
-
-
-
-
-
-
-
-
Values
0.95
typ.
250
4.5
30
5
9
2
2
-
-
-
-
-
-
max.
900
1.8
1.3
1.3
2007-08-09
-
-
-
-
-
-
-
-
-
-
BCV61
Unit
V
-
mA
MHz
pF
dB
k
10
-
S
-4