TPCP8F01(TE85L,F) Toshiba, TPCP8F01(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: TPCP8F01(TE85L,F)
• Description: MOSFET N-CH PNP 20V 2-3V1B
• Manufacturer: Toshiba

Specifications of TPCP8F01(TE85L,F)

• Transistor Type: PNP, N-Channel
• Applications: Load Switch
• Voltage - Rated: 20V PNP, 20V N-Channel
• Current Rating: 3A PNP, 100mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 8-WSSOP (0.094", 2.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Transistor
MOS FET
Precautions
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector Output Capacitance
Switching time
Figure 3. Switching Time Test Circuit & Timing Chart
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate Threshold voltage
Forward Transfer Admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Figure 4. Switching Time Test Circuit & Timing Chart
V
this product. For normal switching operation, V
lower voltage than V
Please take this into consideration for using the device.
VGS recommended voltage of 2.5V or higher to turn on this product.
th
can be expressed as voltage between gate and source when low operating current value is I
2.5V
0
I
B1
Characteristics
Characteristics
20us
10us
Rise time
Storage time
Fall time
Turn-on time
Turn-off time
th
I
B2
. (relationship can be established as follows: V
Vin
Vin
Rg
(Ta = 25°C)
IB2
IB1
V
V
V
V
R
Symbol
Symbol
h
h
(BR) CEO
(BR) DSS
CE (sat)
BE (sat)
DS(ON)
I
I
FE
FE
I
I
C
|Y
C
C
C
CBO
EBO
GSS
t
DSS
V
t
t
stg
oss
on
off
t
t
rss
iss
ob
r
th
fs
f
(1)
(2)
GS(ON)
|
RL
VDD
Vout
V
V
I
V
V
I
I
V
See Figure 3 circuit diagram
V
−I
V
I
V
V
V
I
I
I
V
V
V
C
C
C
D
D
D
D
VCC
CB
EB
CE
CE
CB
CC
GS
DS
DS
DS
DS
DD
GS
requires higher voltage than V
B1
= −10 mA, I
= −1.6 A, I
= −1.6 A, I
= 0.1 mA, V
= 10 mA, V
= 10 mA, V
= 1 mA, V
Duty Cycle<1%
Vout
RL
3
= −30 V, I
= −7 V, I
= −2 V, I
= −2 V, I
= −10 V, I
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
∼ − −12 V, R
= I
= −10 V, V
∼ − −3 V, R
= 0 to 2.5V
Gate Pulse Width 10us, tr,tf<5ns
(Zout=50ohm),Common Source,Ta=25°C
Duty Cycle<1%
B2
Test Condition
= −53 mA
Test Condition
D
D
GS
GS
B
B
C
C
C
GS
GS
GS
= 0.1 mA
= 10 mA
B
E
E
GS
L
= −53 mA
= −53 mA
= 0
= −0.5 A
= −1.6 A
DS
L
= 1.5 V
= 0
= 300 Ω
= 0
= 0, f = 1MHz
= 0, f = 1 MHz
= 4.0 V
= 2.5 V
GS(OFF)
= 7.5 Ω
= 0
= 0
= 0
＜ V
th
th
＜ V
snd V
Min
−20
200
100
Min
0.6
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
GS(ON)
GS(OFF)
Typ.
Typ.
150
125
D
1.5
2.2
5.2
9.3
4.5
9.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
28
70
40
⎯
⎯
⎯
⎯
⎯
70
= 100μA for
)
TPCP8F01
requires
2004-04-09
−0.19
−1.10
−100
−100
Max
Max
500
1.1
±1
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
3
4
Unit
Unit
μA
μA
mS
nA
nA
pF
pF
ns
Ω
ns
V
V
V
V
V