TPCP8F01(TE85L,F,M Toshiba, TPCP8F01(TE85L,F,M Datasheet

TPCP8F01(TE85L,F,M

Manufacturer Part Number

TPCP8F01(TE85L,F,M

Description

MOSFET Transistor PNP 20V, 3A

Manufacturer

Toshiba

Datasheet

1.TPCP8F01TE85LFM.pdf (8 pages)

Specifications of TPCP8F01(TE85L,F,M

Product Category

MOSFET

Rohs

yes

Factory Pack Quantity

3000

Current page: 1 of 8
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Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type

○ Swtching Applications

○ Load Switch Applications

○ Multi-chip discrete device; built-in PNP Transistor for

•

Absolute Maximum Ratings

main switch and N-ch MOS FET for drive

High DC current gain: h

Low collector-emitter saturation: V

High-speed switching: t

Transistor

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

MOS FET

Drain-source voltage

Gate-source voltage

Drain current

Channel temperature

Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Pulse

= 40 ns (typ.) (PNP Transistor)

= 200 to 500 (I

CE (sat)

(Ta = 25°C)

TPCP8F01

Symbol

CBO

CEO

TOSHIBA Multi-chip Device

EBO

DSS

GSS

(Note 1)

(PNP Transistor)

= −0.19 V (max)

= −0.5 A)

Rating

−250

−3.0

−5.0

−30

−20

150

±10

100

200

150

1.0

−7

Unit

°C

)

Weight : 0.017g (Typ.)

JEDEC

JEITA

TOSHIBA

0.475

1.Source

2.Collector

3.Collector

4.Collector

0.33±0.05

0.025

0.65

2.9±0.1

0.17±0.02

0.05

5.Emitter

6.Base

7.Gate

8.Drain

TPCP8F01

2-3V1B

2006-11-13

―

1.12

0.28

0.8±0.05

+0.1

+0.13

+0.1

-0.11

0.05

-0.12

Unit: mm

Related parts for TPCP8F01(TE85L,F,M

TPCP8F01(TE85L,F,M Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Common Absolute Maximum Rating (Ta = 25°C) Characteristics Storage temperature range Figure 2 Marking (Note 8F01 Lot No. * (Weekly code Note 3 : Black round marking "・" located on the ...

Page 3

Electrical Characteristics Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector Output Capacitance Rise time Switching time Storage time Fall time Figure 3. Switching Time Test Circuit & ...

Page 4

PNP I – −6 Common emitter Ta = 25°C Single nonrepetitive pulse −5 −80 mA −100 mA −4 −3 −2 −1 0 −0.4 −0.8 −1.2 0 Collector-emitter voltage V V – (sat Common ...

Page 5

Safe Operation Area max (pulsed) * 100 μs* 10 ms* 1 ms* 10 μ max (continuous) 100 ms* DC OPERATION 1 (Ta = 25° Single nonrepetitive ...

Page 6

Nch-MOS I – 250 4 3 2.5 2.3 2.1 10 200 150 100 0.5 1.0 Drain−source voltage V R – (ON) 8 Common source ...

Page 7

1000 Common source 100 100° −25 0.1 0. Gate−source voltage V GS − 2.0 Common source ...

Page 8

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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