TPCP8F01(TE85L,F) Toshiba, TPCP8F01(TE85L,F) Datasheet
TPCP8F01(TE85L,F)
Specifications of TPCP8F01(TE85L,F)
Related parts for TPCP8F01(TE85L,F)
TPCP8F01(TE85L,F) Summary of contents
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... Collector power dissipation Junction temperature MOS FET Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Channel temperature Note 1 : Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm TOSHIBA Multi-chip Device TPCP8F01 = −0 (PNP Transistor) = −0.19 V (max) CE (sat) (PNP Transistor) Symbol Rating Unit − ...
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Common Maximum Rating (Ta = 25°C) Characteristics Storage temperature range Figure 2 Marking (Note 8F01 Type Lot No. ※ (Weekly code Note 2 : Black round marking "・" located on the ...
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Electrical Characteristics (Ta = 25°C) Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector Output Capacitance Rise time Switching time Storage time Fall time Figure 3. Switching Time ...
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PNP I – −6 Common emitter Ta = 25°C Single nonrepetitive pulse −5 −80 mA −100 mA −4 −3 −2 −1 0 −0.4 −0.8 −1.2 −1.6 0 Collector-emitter voltage – (sat) C ...
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Safe Operation Area max (pulsed) * 100 µs* 10 µs* 10 ms max (continuous) 100 ms* DC OPERATION 1 (Ta = 25° Single nonrepetitive ...
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Nch-MOS I – 250 Common source Ta = 25° 2.5 2.3 2.1 200 10 150 100 0.5 1.0 1.5 Drain−source voltage – (ON) 8 Common source 7 ...
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1000 Common source 100 100° −25 0.1 0. Gate−source voltage V (V) GS − 2.0 Common source I D ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...