BCV61B,235 NXP Semiconductors, BCV61B,235 Datasheet - Page 7

• Manufacturer Part Number: BCV61B,235
• Description: TRANS NPN 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV61B,235

• Transistor Type: 2 NPN, Base Collector Junction
• Applications: Current Mirror
• Voltage - Rated: 30V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933792110235; BCV61B /T3; BCV61B /T3

NXP Semiconductors
BCV61_4
Product data sheet
Fig 9.
Fig 11. BCV61C: Collector-emitter saturation voltage
V
(mV)
CEsat
h
1200
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
800
600
400
200
10
10
10
10
10
0
10
4
3
2
V
BCV61C: DC current gain as a function of
collector current; typical values
I
as a function of collector current; typical
values
−1
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
1
(1)
(3)
(1)
(2)
(3)
(2)
10
10
10
10
2
2
I
I
C
C
(mA)
(mA)
mgt731
mgt733
Rev. 04 — 18 December 2009
10
10
3
3
Fig 10. BCV61C: Base-emitter voltage as a function of
Fig 12. BCV61C: Base-emitter saturation voltage as a
V
(mV)
(mV)
V
BEsat
BE
1200
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
1200
1000
800
600
400
200
800
600
400
200
0
0
10
10
V
collector current; typical values
I
function of collector current; typical values
C
−1
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
NPN general-purpose double transistors
= 5 V
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
10
−1
1
(1)
(2)
(3)
1
(1)
(2)
(3)
10
10
10
© NXP B.V. 2009. All rights reserved.
2
10
I
I
C
2
C
(mA)
BCV61
mgt732
mgt734
(mA)
10
10
3
3
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