BCV61B,235 NXP Semiconductors, BCV61B,235 Datasheet - Page 6

TRANS NPN 30V 100MA DUAL SOT143B

BCV61B,235

Manufacturer Part Number
BCV61B,235
Description
TRANS NPN 30V 100MA DUAL SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV61B,235

Transistor Type
2 NPN, Base Collector Junction
Applications
Current Mirror
Voltage - Rated
30V
Current Rating
100mA
Mounting Type
Surface Mount
Package / Case
TO-253-4, TO-253AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933792110235
BCV61B /T3
BCV61B /T3
NXP Semiconductors
BCV61_4
Product data sheet
Fig 5.
Fig 7.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
500
400
300
200
100
10
10
10
10
10
0
10
4
3
2
V
BCV61B: DC current gain as a function of
collector current; typical values
I
as a function of collector current; typical
values
BCV61B: Collector-emitter saturation voltage
−1
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
1
(1)
(3)
(2)
10
10
(1)
(2)
(3)
10
10
2
2
I
I
C
C
(mA)
(mA)
mgt727
mgt729
Rev. 04 — 18 December 2009
10
10
3
3
Fig 6.
Fig 8.
V
(mV)
(mV)
V
BEsat
BE
1200
1000
(1) T
(2) T
(3) T
1200
1000
(1) T
(2) T
(3) T
800
600
400
200
800
600
400
200
0
0
10
10
V
BCV61B: Base-emitter voltage as a function of
collector current; typical values
I
BCV61B: Base-emitter saturation voltage as a
function of collector current; typical values
C
−1
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
NPN general-purpose double transistors
= 5 V
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
10
−1
1
(1)
(2)
(3)
1
(1)
(2)
(3)
10
10
10
© NXP B.V. 2009. All rights reserved.
2
10
I
C
I
2
C
(mA)
BCV61
mgt730
mgt728
(mA)
10
10
3
3
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