BCM62B,215 NXP Semiconductors, BCM62B,215 Datasheet - Page 7

• Manufacturer Part Number: BCM62B,215
• Description: TRANS PNP DBL 45V 100MA SOT-143B
• Manufacturer: NXP Semiconductors

Specifications of BCM62B,215

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: 2 PNP (Dual)
• Applications: Current Mirror
• Voltage - Rated: 45V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Gain Bandwidth Product Ft: 175 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 220 mW
• Maximum Operating Frequency: 175 MHz at TR1
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059882215

NXP Semiconductors
BCM62B_2
Product data sheet
Fig 5.
Fig 7.
V
(pF)
(V)
C
BE
c
1.0
0.8
0.6
0.4
7
5
3
1
10
0
V
Base-emitter voltage as a function of collector
current; typical values
f = 1 MHz; T
Collector capacitance as a function of
collector-base voltage; typical values
CE
1
= 5 V; T
2
1
amb
amb
= 25 C
= 25 C
4
10
6
10
2
8
I
006aaa836
006aaa838
C
V
(mA)
CB
(V)
Rev. 02 — 28 August 2009
10
10
3
Fig 6.
Fig 8.
(MHz)
(pF)
C
f
T
10
10
e
10
15
13
11
9
7
5
3
2
V
Transition frequency as a function of collector
current; typical values
0
f = 1 MHz; T
Emitter capacitance as a function of
emitter-base voltage; typical values
1
CE
= 5 V; T
PNP/PNP matched double transistor
amb
amb
2
= 25 C
= 25 C
10
4
I
C
(mA)
BCM62B
V
© NXP B.V. 2009. All rights reserved.
EB
006aaa837
006aaa839
(V)
10
6
2
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