MUN2111T3 ON Semiconductor, MUN2111T3 Datasheet - Page 9

• Manufacturer Part Number: MUN2111T3
• Description: TRANS BRT PNP 100MA 50V SC-59
• Manufacturer: ON Semiconductor

Specifications of MUN2111T3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.01
0.1
12
10
1
8
6
4
2
0
0
0
5
I
C
75°C
−25°C
/I
B
5
10
=10
Figure 25. Output Capacitance
V
I
C
R,
, COLLECTOR CURRENT (mA)
Figure 23. V
15
10
REVERSE BIAS VOLTAGE (V)
20
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1
15
25
0.1
CE(sat)
10
30
1
20
0
35
Figure 27. Input Voltage vs. Output Current
vs. I
f = 1 MHz
I
T
25
E
A
40
C
= 0 A
= 25°C
5
I
C,
45
25°C
MUN2111T1 Series
COLLECTOR CURRENT (mA)
30
http://onsemi.com
T
25°C
50
A
= −25°C
10
55
35
9
75°C
1000
0.01
0.01
100
100
10
10
15
1
1
1
0
I
C
Figure 26. Output Current vs. Input Voltage
/I
V
75°C
B
O
75°C
1
= 10
= 0.2 V
20
Figure 24. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
2
T
A
V
in,
= 25°C
−25°C
25
INPUT VOLTAGE (V)
−25°C
3
10
4
5
25°C
V
6
O
= 5 V
7
100
8