MUN2111T3 ON Semiconductor, MUN2111T3 Datasheet - Page 6

• Manufacturer Part Number: MUN2111T3
• Description: TRANS BRT PNP 100MA 50V SC-59
• Manufacturer: ON Semiconductor

Specifications of MUN2111T3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.01
4
3
2
0
1
0.1
10
0
1
0
V
I
R
C
Figure 10. Output Capacitance
10
, REVERSE BIAS VOLTAGE (VOLTS)
/I
B
I
= 10
C
20
, COLLECTOR CURRENT (mA)
Figure 8. V
20
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1
CE(sat)
40
100
30
0.1
10
1
0
vs. I
T
Figure 12. Input Voltage vs. Output Current
A
f = 1 MHz
l
T
V
E
= −25°C
C
A
O
= 0 V
40
60
= 25°C
= 0.2 V
10
I
MUN2111T1 Series
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
50
T
A
80
= −25°C
20
6
0.001
1000
0.01
100
75°C
100
0.1
10
10
1
1
0
30
Figure 11. Output Current vs. Input Voltage
75°C
25°C
1
2
I
40
C
Figure 9. DC Current Gain
V
, COLLECTOR CURRENT (mA)
25°C
in
, INPUT VOLTAGE (VOLTS)
3
T
A
= −25°C
4
50
10
5
6
−25°C
T
A
7
= 75°C
V
CE
V
8
O
= 10 V
= 5 V
25°C
9
10
10
0