MUN2111T3 ON Semiconductor, MUN2111T3 Datasheet - Page 5

• Manufacturer Part Number: MUN2111T3
• Description: TRANS BRT PNP 100MA 50V SC-59
• Manufacturer: ON Semiconductor

Specifications of MUN2111T3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
3
2
1
0
0.01
0.1
0
1
0
I
V
C
R
/I
10
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 5. Output Capacitance
B
= 10
I
C
, COLLECTOR CURRENT (mA)
20
Figure 3. V
20
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1
100
0.1
10
1
40
CE(sat)
0
T
30
A
Figure 7. Input Voltage vs. Output Current
= −2°5C
vs. I
V
O
= 0.2 V
f = 1 MHz
l
T
10
C
E
40
A
I
C
60
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
75°C
MUN2111T1 Series
http://onsemi.com
25°C
50
20
80
5
1000
0.001
T
0.01
100
100
A
30
0.1
10
10
= −25°C
1
1
0
75°C
Figure 6. Output Current vs. Input Voltage
1
75°C
25°C
40
I
C
2
Figure 4. DC Current Gain
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
T
A
3
50
= −25°C
25°C
4
10
5
6
V
O
7
−25°C
= 5 V
V
T
CE
A
8
= 75°C
= 10 V
25°C
9
100
10