BCR 153L3 E6327 Infineon Technologies, BCR 153L3 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 153L3 E6327
• Description: TRANSISTOR PNP DGTL AF TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 153L3 E6327

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR153L3E6327XT; SP000014866

Total power dissipation P
BCR153F
Total power dissipation P
BCR153T
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= (T
= (T
S
S
)
)
T
T
S
S
150
150
4
Total power dissipation P
BCR153L3
mW
300
250
225
200
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120 °C
tot
= (T
BCR153...
2006-05-10
S
)
T
S
150