BCR 153F E6327 Infineon Technologies, BCR 153F E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 153F E6327
• Description: TRANSISTOR PNP DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 153F E6327

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR153FE6327XT; SP000014444

Total power dissipation P
BCR153F
Permissible Puls Load R
BCR153F
K/W
mW
10
10
10
10
300
250
225
200
175
150
125
100
75
50
25
-1
0
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
thJS
90 105 120 °C
tot
10
= (T
=
-2
(t
S
p
s
)
)
T
t
p
S
150
10
0
4
Permissible Pulse Load
P
BCR153F
totmax
10
10
10
10
3
2
1
0
10
/P
-6
totDC
10
-5
=
10
(t
p
-4
)
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-3
10
BCR153...
-2
2007-08-21
s
t
p
10
0