BCR 153F E6327 Infineon Technologies, BCR 153F E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 153F E6327
• Description: TRANSISTOR PNP DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 153F E6327

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR153FE6327XT; SP000014444

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 20 mA, V
= 20 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 10 V, I
= 40 V, I
= 10 V, f = 1 MHz
E
CE
B
E
C
B
CE
CE
= 0
CE
= 1 mA
= 0
= 0
= 0
1)
= 0.3 V
= 5 V
= 5 V, f = 100 MHz
= 5 V
A
= 25°C, unless otherwise specified
1)
2
f
C
Symbol
V
V
I
I
h
V
V
V
R
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
1
1
/R
2
min.
0.8
0.8
1.5
0.9
50
50
20
-
-
-
-
-
Values
typ.
200
2.2
1
3
-
-
-
-
-
-
-
-
max.
100
3.5
0.3
1.5
2.5
2.9
1.1
BCR153...
2007-08-21
-
-
-
-
-
MHz
pF
Unit
V
nA
mA
-
V
k
-