BCR 119L3 E6327 Infineon Technologies, BCR 119L3 E6327 Datasheet - Page 4
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BCR 119L3 E6327
Manufacturer Part Number
BCR 119L3 E6327
Description
TRANSISTOR NPN DGTL AF TSLP-3
Manufacturer
Infineon Technologies
Datasheet
1.BCR_119L3_E6327.pdf
(10 pages)
Specifications of BCR 119L3 E6327
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
150MHz
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
TSLP-3-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR119L3E6327XT
SP000014854
SP000014854
DC current gain h
V
Input on Voltage V
V
CE
CE
mA
10
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
= 0.3V (common emitter configuration)
-
-1
-1
3
2
1
0
2
1
0
10
10
-1
-1
10
10
FE
i (on)
0
0
=
= (I
(I
C
)
C
10
10
)
1
1
mA
V
I
V
C
i(on)
10
10
2
2
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
mA
mA
10
10
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
-1
-1
-2
-3
2
1
0
2
1
0
0
0
= (I
C
), h
0.1
1
FE
= 20
i(off)
0.2
2
BCR119.../SEMH7
=
0.3
3
(I
C
)
May-17-2004
V
V
V
V
i(off)
CEsat
0.5
5