BCR 119L3 E6327 Infineon Technologies, BCR 119L3 E6327 Datasheet - Page 2

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BCR 119L3 E6327

Manufacturer Part Number
BCR 119L3 E6327
Description
TRANSISTOR NPN DGTL AF TSLP-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 119L3 E6327

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
150MHz
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
TSLP-3-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR119L3E6327XT
SP000014854
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
DC collector current
Total power dissipation-
BCR119, T
BCR119F, T
BCR119L3, T
BCR119S, T
BCR119T, T
BCR119W, T
SEMH7, T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
BCR119
BCR119F
BCR119L3
BCR119S
BCR119T
BCR119W
SEMH7
1 For calculation of R
S
S
S
S
S
S
S
75°C
102°C
128°C
109°C
115°C
124°C
thJA
135°C
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
V
I
P
T
T
Symbol
R
E
j
stg
CEO
CBO
EBO
i(on)
tot
thJS
-65 ... 150
BCR119.../SEMH7
Value
Value
100
200
250
250
250
250
250
250
150
50
50
15
240
140
165
105
300
5
90
60
May-17-2004
Unit
V
mA
mW
°C
Unit
K/W

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