PDTD113ZT,215 NXP Semiconductors, PDTD113ZT,215 Datasheet - Page 5

• Manufacturer Part Number: PDTD113ZT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD113ZT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 10
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058981215; PDTD113ZT T/R; PDTD113ZT T/R

NXP Semiconductors
8. Package outline
9. Packing information
PDTD113ZT_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
PDTD113ZT
Fig 5.
For further information and the availability of packing methods, see
Package outline SOT23 (TO-236AB)
Packing methods
SOT23
2.5
2.1
NPN 500 mA resistor-equipped transistor; R1 = 1 k , R2 = 10 k
Dimensions in mm
Rev. 02 — 23 March 2009
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
3.0
2.8
1.9
3
2
0.48
0.38
0.45
0.15
Section
1.1
0.9
0.15
0.09
[1]
PDTD113ZT
04-11-04
13.
Packing quantity
3000
-215
© NXP B.V. 2009. All rights reserved.
10000
-235
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