PDTD113ZT,215 NXP Semiconductors, PDTD113ZT,215 Datasheet - Page 5

TRANS NPN W/RES 50V SOT-23

PDTD113ZT,215

Manufacturer Part Number
PDTD113ZT,215
Description
TRANS NPN W/RES 50V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTD113ZT,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
1 KOhms
Typical Resistor Ratio
10
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
500 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
5 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058981215
PDTD113ZT T/R
PDTD113ZT T/R
NXP Semiconductors
8. Package outline
9. Packing information
PDTD113ZT_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
PDTD113ZT
Fig 5.
For further information and the availability of packing methods, see
Package outline SOT23 (TO-236AB)
Packing methods
SOT23
2.5
2.1
NPN 500 mA resistor-equipped transistor; R1 = 1 k , R2 = 10 k
Dimensions in mm
Rev. 02 — 23 March 2009
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
3.0
2.8
1.9
3
2
0.48
0.38
0.45
0.15
Section
1.1
0.9
0.15
0.09
[1]
PDTD113ZT
04-11-04
13.
Packing quantity
3000
-215
© NXP B.V. 2009. All rights reserved.
10000
-235
5 of 9

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