PDTD113ZT,215 NXP Semiconductors, PDTD113ZT,215 Datasheet - Page 2

• Manufacturer Part Number: PDTD113ZT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD113ZT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 10
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058981215; PDTD113ZT T/R; PDTD113ZT T/R

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PDTD113ZT_2
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number Package
PDTD113ZT
Type number
PDTD113ZT
Symbol
V
V
V
V
I
O
CBO
CEO
EBO
I
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Limiting values
Description
input (base)
GND (emitter)
output (collector)
Name
-
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
positive
negative
NPN 500 mA resistor-equipped transistor; R1 = 1 k , R2 = 10 k
Rev. 02 — 23 March 2009
Description
plastic surface-mounted package; 3 leads
Conditions
open emitter
open base
open collector
Marking code
*7V
Simplified outline
1
[1]
3
Min
-
-
-
-
-
-
2
PDTD113ZT
Graphic symbol
© NXP B.V. 2009. All rights reserved.
1
Max
50
50
5
+10
500
5
R1
Version
SOT23
sym007
R2
Unit
V
V
V
V
V
mA
2 of 9
3
2