MUN2111T1G ON Semiconductor, MUN2111T1G Datasheet - Page 7

• Manufacturer Part Number: MUN2111T1G
• Description: TRANS BRT PNP 100MA 50V SC59
• Manufacturer: ON Semiconductor

Specifications of MUN2111T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: PNP
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-59
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUN2111T1GOS; MUN2111T1GOS; MUN2111T1GOSTR

0.4
0.8
0.6
0.2
0.01
1
0
0.1
0
1
0
I
C
/I
V
B
R
Figure 15. Output Capacitance
10
, REVERSE BIAS VOLTAGE (VOLTS)
= 10
I
C
10
, COLLECTOR CURRENT (mA)
Figure 13. V
20
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1
20
T
CE(sat)
100
A
0.1
10
= −25°C
30
1
0
vs. I
Figure 17. Input Voltage vs. Output Current
f = 1 MHz
l
T
E
75°C
A
C
= 0 V
30
= 25°C
40
T
10
A
MUN2111T1 Series
I
25°C
= −25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
50
20
40
7
75°C
0.001
1000
0.01
100
100
25°C
0.1
10
10
1
30
0
1
Figure 16. Output Current vs. Input Voltage
1
V
2
40
O
I
C
Figure 14. DC Current Gain
V
= 0.2 V
, COLLECTOR CURRENT (mA)
in
3
, INPUT VOLTAGE (VOLTS)
V
4
50
O
= 5 V
5
10
T
6
A
= 75°C
T
−25°C
A
7
= 75°C
8
−25°C
25°C
25°C
9
100
10