MUN2111T1G ON Semiconductor, MUN2111T1G Datasheet - Page 11

• Manufacturer Part Number: MUN2111T1G
• Description: TRANS BRT PNP 100MA 50V SC59
• Manufacturer: ON Semiconductor

Specifications of MUN2111T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: PNP
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-59
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUN2111T1GOS; MUN2111T1GOS; MUN2111T1GOSTR

1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0
1
0
Figure 33. Maximum Collector Voltage vs.
V
10
R
1
Figure 35. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
2
Collector Current
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
3
30
100
10
1
0
4
Figure 37. Input Voltage vs. Output Current
−25°C
25°C
40
75°C
2
f = 1 MHz
I
T
5
E
4
A
I
25°C
C
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
50
I
MUN2111T1 Series
C
/I
6
http://onsemi.com
B
6
= 10
75°C
T
A
8
= −25°C
60
7
11
10
1000
100
12
100
0.1
10
10
1
1
0
1
V
14
O
Figure 36. Output Current vs. Input Voltage
= 0.2 V
1
16
2
I
Figure 34. DC Current Gain
C
V
18
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
3
A
75°C
= −25°C
20
25°C
4
5
10
25°C
6
T
V
A
7
O
V
75°C
= −25°C
CE
= 5 V
= 10 V
8
9
100
10