MUN2111T1G ON Semiconductor, MUN2111T1G Datasheet - Page 12

• Manufacturer Part Number: MUN2111T1G
• Description: TRANS BRT PNP 100MA 50V SC59
• Manufacturer: ON Semiconductor

Specifications of MUN2111T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: PNP
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-59
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUN2111T1GOS; MUN2111T1GOS; MUN2111T1GOSTR

1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0
1
0
Figure 38. Maximum Collector Voltage vs.
5
V
25°C
10
R
Figure 40. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
, COLLECTOR CURRENT (mA)
20
15
Collector Current
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1
20
100
30
T
10
A
1
25
= −25°C
0
Figure 42. Input Voltage vs. Output Current
30
25°C
40
35
5
f = 1 MHz
I
T
E
I
A
C
75°C
= 0 V
, COLLECTOR CURRENT (mA)
I
= 25°C
50
C
MUN2111T1 Series
40
/I
B
http://onsemi.com
= 10
45
T
10
A
60
= −25°C
50
12
0.001
1000
0.01
15
100
100
0.1
10
10
1
0
1
75°C
V
Figure 41. Output Current vs. Input Voltage
O
1
= 0.2 V
20
2
I
Figure 39. DC Current Gain
C
V
, COLLECTOR CURRENT (mA)
in
3
, INPUT VOLTAGE (VOLTS)
25
4
25°C
5
10
75°C
6
T
A
75°C
7
= −25°C
T
A
= −25°C
8
V
CE
V
9
= 10 V
O
25°C
= 5 V
10
100
11