BULT118 STMicroelectronics, BULT118 Datasheet - Page 3

• Manufacturer Part Number: BULT118
• Description: TRANSISTOR POWER NPN SOT-32
• Manufacturer: STMicroelectronics

Specifications of BULT118

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 400mA, 2A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 500mA, 5V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-7211-5; BULT118

BULT118
2
Electrical characteristics
(T
Table 3.
1. Pulsed duration = 300 µs, duty cycle ≤1.5 %
V
V
V
CEO(sus)
case
Symbol
CE(sat)
BE(sat)
h
V
I
I
FE
CES
CEO
EBO
t
t
t
t
t
s
s
r
f
f
= 25°C unless otherwise specified)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector-emitter leakage
current
Emitter-base voltage
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Rise time
Storage time
Fall time
Inductive load
Storage time
Fall time
B
BE
= 0)
=0)
Parameter
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
E
C
C
C
C
C
C
C
C
C
C
C
B1
C
CE
CE
CE
BE(off)
Clamp
= 10 mA
= 10 mA
= 0.5 A
= 1 A
= 2 A
= 0.5 A
= 1 A
= 2 A
= 10 mA
= 0.5 A
= 2 A
= 1 A
= 1 A
=-I
= 700 V
= 700 V T
= 400 V
Test conditions
B2
= 300 V
= -5 V
= 0.2 A
_
_
_
_
_ _
_
_
I
I
I
I
I
I
V
V
V
V
C
B
B
B
B
B
B
CE
CE
CE
CC
I
= 125 °C
L= 50 mH
= 0.1 A
= 0.2 A
= 0.4 A
= 0.1 A
= 0.2 A
= 0.4 A
B1
= 125 V
= 5 V
= 5 V
= 5 V
= 0.2 A
Min.
Electrical characteristics
400
10
10
9
8
Typ.
0.25
0.16
0.4
3.2
0.8
Max.
100
500
250
0.5
1.5
1.2
1.3
0.7
4.5
0.4
50
1
1
Unit
µA
µA
µA
µs
µs
µs
µs
µs
V
V
V
V
V
V
V
V
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