MT48LC4M16A2TG-75 IT:G Micron Technology Inc, MT48LC4M16A2TG-75 IT:G Datasheet - Page 65
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT48LC4M16A2TG-75 IT:G
Manufacturer Part Number
MT48LC4M16A2TG-75 IT:G
Description
DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC4M16A2TG-75_ITG.pdf
(72 pages)
Specifications of MT48LC4M16A2TG-75 IT:G
Density
64 Mb
Maximum Clock Rate
133 MHz
Package
54TSOP-II
Address Bus Width
14 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
6|5.4 ns
Operating Temperature
-40 to 85 °C
Organization
4Mx16
Address Bus
14b
Access Time (max)
6/5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
140mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Not Compliant
Figure 48:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
DQML, DQMH
COMMAND
A0–A9, A11
BA0, BA1
DQM /
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
WRITE – With Auto Precharge
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, BL = 4.
2. x16: A8, A9 and A11 = “Don’t Care”
ENABLE AUTO PRECHARGE
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t CMS
t CL
t DS
COLUMN m 2
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
65
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR
T6
NOP
64Mb: x4, x8, x16 SDRAM
T7
NOP
©2000 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t RP
NOP
T8
ACTIVE
ROW
ROW
BANK
T9
DON’T CARE