NJW0281G ON Semiconductor, NJW0281G Datasheet - Page 4

• Manufacturer Part Number: NJW0281G
• Description: TRANS NPN BIPOLAR 15A TO-3P
• Manufacturer: ON Semiconductor

Specifications of NJW0281G

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 1V @ 500mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 3A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, TO-247-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

60
50
40
30
20
10
0
0.01
Figure 9. NJW0281G Current Gain Bandwidth
V
25°C
CE
= 5.0 V
I
C
, COLLECTOR CURRENT (A)
0.1
Product
NJW0281G (NPN) NJW0302G (PNP)
1
http://onsemi.com
10
4
70
60
50
40
30
20
10
0.01
0
Figure 10. NJW0302G Current Gain Bandwidth
V
CE
25°C
= 5.0 V
I
C
, COLLECTOR CURRENT (A)
0.1
Product
1
10