NJW0281G ON Semiconductor, NJW0281G Datasheet - Page 3

• Manufacturer Part Number: NJW0281G
• Description: TRANS NPN BIPOLAR 15A TO-3P
• Manufacturer: ON Semiconductor

Specifications of NJW0281G

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 1V @ 500mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 3A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, TO-247-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
500
100
1.4
1.2
0.8
0.6
0.4
0.2
0.1
10
10
0.05 0.1
1
0
1
0.01
0.01
V
V
I
C
CE
CE
Figure 5. NJW0281G Base-Emitter Voltage
25°C
/I
-25°C
B
Figure 7. NJW0281G Saturation Voltage
Figure 3. NJW0281G DC Current Gain
= 5.0 V
= 5.0 V
= 10
0.1
I
I
C
I
0.1
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
100°C
100°C
25°C
1
-25°C
1
1
25°C
NJW0281G (NPN) NJW0302G (PNP)
100°C
-25°C
10
10
10
http://onsemi.com
100
100
50
3
500
100
-0.1
0.01
2.4
1.9
1.4
0.9
0.4
10
0.1
10
0.05 0.1
0.01
1
0.01
V
I
V
CE
C
Figure 6. NJW0302G Base-Emitter Voltage
CE
/I
25°C
B
Figure 8. NJW0302G Saturation Voltage
= 5.0 V
Figure 4. NJW0302G DC Current Gain
= 10
-25°C
= 5.0 V
25°C
-25°C
I
100°C
I
0.1
C
I
C
C
0.1
-25°C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
100°C
100°C
1
25°C
1
100°C
1
10
10
10
100
100
50